Method of fabricating semiconductor strucutre

ABSTRACT

A method of fabricating a semiconductor structure including the following steps is provided. A mask layer is formed on a semiconductor substrate. The semiconductor substrate revealed by the mask layer is anisotropically etched until a cavity is formed in the semiconductor substrate, wherein anisotropically etching the semiconductor substrate revealed by the mask layer comprises performing a plurality of first cycles and performing a plurality of second cycles after performing the first cycles, each cycle among the first and second cycles respectively includes performing a passivating step and performing an etching step after performing the passivating step. During the first cycles, a first duration ratio of the etching step to the passivating step is variable and ramps up step by step. During the second cycles, a second duration ratio of the etching step to the passivating step is constant, and the first duration ratio is less than the second duration ratio.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims the priority benefits of U.S. provisionalapplication Ser. No. 62/584,896, filed on Nov. 12, 2017. The entirety ofthe above-mentioned patent application is hereby incorporated byreference herein and made a part of this specification.

BACKGROUND

To fabricate openings, trenches or cavities with high aspect ratio insemiconductor substrates, Bosch process is commonly used. The currentBosch process suffers poor etching uniformity and poor etching profilecontrol when deep etching is performed in the semiconductor substrates.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1A through FIG. 1C schematically illustrate cross-sectional viewsof a method of fabricating a semiconductor structure according to someembodiments of the present disclosure.

FIG. 2 is a flow chart schematically illustrating a method offabricating the cavity according to some embodiments of the presentdisclosure.

FIG. 3A, FIG. 3B and FIG. 3C are diagrams respectively illustrating theetching steps and the passivating steps of the first cycles, the secondcycles and the third cycles according to some embodiments of the presentdisclosure.

FIG. 4A through FIG. 4E schematically illustrate cross-sectional view ofa method of fabricating the cavity shown in X portion of FIG. 1Caccording to some embodiments of the present disclosure.

FIG. 5A through FIG. 5F schematically illustrate cross-sectional viewsof a method of fabricating a cavity substrate according to someembodiments of the present disclosure.

FIG. 6A through FIG. 6E schematically illustrate cross-sectional view ofa method of fabricating the second cavity shown in Y portion of FIG. 5Eaccording to some embodiments of the present disclosure.

FIG. 7A through FIG. 7C schematically illustrate cross-sectional viewsof a method of fabricating a microelectromechanical system (MEMS) deviceincluding a cavity substrate, a MEMS substrate and a control circuit.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

FIG. 1A through FIG. 1C schematically illustrate cross-sectional viewsof a method of fabricating a semiconductor structure according to someembodiments of the present disclosure.

Referring to FIG. 1A, a semiconductor substrate 100 is provided and amask material layer 110 on the semiconductor substrate 100. For example,the semiconductor substrate 100 may include a silicon substrate orsubstrates made of other semiconductor materials. After forming the maskmaterial layer 110 on the semiconductor substrate 100, aphotolithography process, for example, is performed such that apatterned photoresist layer PR1 is formed on the mask material layer110. The patterned photoresist layer PR1 may include at least one or aplurality of openings for exposing or revealing the mask material layer110 partially. In some embodiments, the mask material layer 110 mayinclude silicon dioxide or other materials having high etchingselectivity with respect to the material of the semiconductor substrate100 (e.g. silicon).

Referring to FIG. 1A and FIG. 1B, by utilizing the patterned photoresistlayer PR1 as a mask, the mask material layer 110 revealed or not coveredby the patterned photoresist layer PR1 may be removed until thesemiconductor substrate 100 is exposed such that a mask layer 110 ahaving predetermined pattern is formed on the semiconductor substrate100. In some embodiments, the mask material layer 110 may be patternedthrough an etching process. After forming the mask layer 110 a, thepatterned photoresist layer PR1 is stripped.

Referring to FIG. 1C, a multi-step anisotropic etching process isperformed to form a cavity 102 in the semiconductor substrate 100. Byutilizing the mask layer 110 a as an etching mask, the semiconductorsubstrate 100 revealed by the mask layer 110 a is anisotropically etcheduntil the cavity 102 having a predetermined depth D is formed. In someembodiments, the depth D of the cavity 102 may range from about 15micrometers to about 25 micrometers. However, the depth D of the cavity102 is not limited.

The multi-step etching process is described in accompany with FIG. 2,FIG. 3A through FIG. 3C and FIG. 4A through FIG. 4E in detail.

FIG. 2 is a flow chart schematically illustrating a method offabricating the cavity according to some embodiments of the presentdisclosure. FIG. 3A, FIG. 3B and FIG. 3C are diagrams respectivelyillustrating the etching steps and the passivating steps of the firstcycles, the second cycles and the third cycles according to someembodiments of the present disclosure. FIG. 4A through FIG. 4Eschematically illustrate cross-sectional view of a method of fabricatingthe cavity 102 shown in X portion of FIG. 1C according to someembodiments of the present disclosure.

Referring to FIG. 2, the multi-step anisotropic etching processmentioned above may include performing a plurality of first cycles C1and performing a plurality of second cycles C2, and the second cycles C2are performed repeatedly after the first cycles C1. The above-mentionedfirst and second cycles C1 and C2 are performed in a reactive chambersuitable for generating plasma for anisotropic etching. Each one cycleamong the first cycles C1 and the second cycles C2 may respectivelyinclude a passivating step and an etching step performed after thepassivating step. After performing the first cycles C1 and the secondcycles C2, a passivation coating may remain on sidewalls of the cavityand a removal process R may be performed to remove the passivationcoating formed on the sidewalls of the cavity. For example, the firstcycles C1 may be performed repeatedly n1 times and the second cycles C2may be performed repeatedly n2 times. For example, n1 may be an integerranging from 2 to 4; and n2 may be an integer ranging from 2 to 4. Thevalue of n1 and n2 depends on the depth D of the cavity.

In some alternative embodiments, the multi-step anisotropic etchingprocess may further include a plurality of third cycles C3 performedrepeatedly after the second cycles C2. The above-mentioned first, secondand third cycles C1, C2 and C3 are performed in a reactive chambersuitable for generating plasma for anisotropic etching. Each one cycleamong the first cycles C1, the second cycles C2 and the third cycles C3may respectively include a passivating step and an etching stepperformed after the passivating step. After performing the first cyclesC1, the second cycles C2 and the third cycles C3, a passivation coatingmay remain on sidewalls of the cavity and a removal process R may beperformed to remove the passivation coating formed on the sidewalls ofthe cavity. For example, the first cycles C1 may be performed repeatedlyn1 times, the second cycles C2 may be performed repeatedly n2 times, andthe third cycles C3 may be performed n3 times. For example, n1 may be aninteger ranging from 2 to 4; n2 may be an integer ranging from 2 to 4;and n3 may be an integer ranging from 2 to 4. The value of n1, n2 and n3depends on the depth D of the cavity.

Referring to FIG. 2, FIG. 3A and FIG. 4A, a pre-coating process isperformed on the semiconductor substrate 100 and the mask layer 110 a bythe first cycles C1 such that a passivation coating 120 is conformallyformed on the mask layer 110 a and the semiconductor substrate 100.Since the passivation coating 120 is formed by the first cycles C1, thefirst cycles C1 are pre-coating cycles. During the first cycles C1, theduration E1 of the etching step is variable and ramps up step by step,the duration D1 of the passivating step is variable and ramps down stepby step, and a first duration ratio E1/D1 of the etching step to thepassivating step is variable and ramps up step by step. In someembodiments, during the first cycles C1 (i.e. the pre-coating cycles),the duration E1 of the etching step linearly ramps up step by step, theduration D1 of the passivating step linearly ramps down step by step,and the first duration ratio E1/D1 non-linearly ramps up step by step.The first duration ratio E1/D1 is variable and may ramp up step by stepfrom X1 to Y1, wherein X1 is less than 1 (e.g. about 0.4), and Y1 isgreater than 1 and less than 1.5.

As shown in FIG. 3A, during the passivating step of each first cycle C1,passivating gas (e.g. C₄F₈ or other suitable passivating gas) isintroduced into the reactive chamber and the flowrate of the passivatinggas may range from about 200 seem to about 300 sccm. In someembodiments, during the passivating step of each first cycle C1,passivating gas is introduced into the reactive chamber and the flowrateof the passivating gas is about 250 sccm. During the etching step ofeach first cycle C1, etching gas (e.g. SF₆ or other suitable etchinggas) is introduced into the reactive chamber and the flowrate of theetching gas may range from about 350 sccm to about 450 sccm. During theetching step of each first cycle C1, etching gas is introduced into thereactive chamber and the flowrate of the passivating gas is about 400sccm, for example. In other words, the passivating gas and the etchinggas are alternately introduced into the reactive chamber when performingthe first cycles C1. In some embodiments, the passivating step of eachfirst cycle C1 may include a boosting B1 followed by a passivating P,wherein the duration of the boosting B1 ranges from about 0.3 second toabout 0.7 second (e.g., about 0.5 second), the process pressure appliedto the reactive chamber during the boosting B1 from about 35 Torr toabout 45 Torr (e.g., about 40 Torr), the duration of the passivating Plinearly ramps down step by step from about 5 seconds to about 2seconds, and the process pressure applied to the reactive chamber duringthe passivating P ranges from about 75 Torr to about 85 Torr (e.g.,about 80 Torr).

In some embodiments, during the foremost cycles (e.g., the first threecycles) among the first cycles C1, each etching step may respectivelyinclude a boosting B2 only, and the duration of the boosting B2 may bevariable and may ramp up from about 2 seconds to about 2.5 seconds stepby step. The boosting B2 may be used to at least partially removeportions of the passivation coating 120 that are formed on top surfacesof the semiconductor substrate 100 and the mask layer 110 a, andportions of the passivation coating 120 formed on sidewalls the masklayer 110 a are not removed by the boosting B2. For example, during theboosting B2 of the first cycles C1, ion bombardment provided by theplasma generated in the reactive chamber is used to remove the portionsof the passivation coating 120 formed on top surfaces of thesemiconductor substrate 100 and the mask layer 110 a. The portions ofthe passivation coating 120 formed on sidewalls the mask layer 110 a arenot removed by ion bombardment provided by the plasma. After performingthe foremost steps (e.g., the first three steps) among the first cyclesC1, the semiconductor substrate 100 may not be etched due to theprotection of the pre-coating (i.e. the passivation coating 120). Theboosting B1 of each first cycle C1 is a pre-treatment performed beforethe passivating P, the passivation coating 120 is deposited by thepassivating P of the first cycles C1, and the boosting B2 of each firstcycle C1 is performed to remove the passivation coating 120 partially.

Referring to FIG. 3A and FIG. 4B, during the rest steps (e.g., thefourth and the fifth steps) among the first cycles C1, each etching stepmay respectively include a boosting B2 followed by a main etching M. Theduration of the boosting B2 may be constant which ranges from about 2seconds to about 3 seconds (e.g., about 2.5 seconds), the processpressure applied to the reactive chamber during the boosting B2 mayrange about 20 Torr to about 30 Torr (e.g., about 25 Torr), the durationof the main etching M may be variable and linearly ramps up step bystep, and the process pressure applied to the reactive chamber duringthe main etching M may range from about 75 Torr to about 85 Torr (e.g.,about 80 Torr). As shown in FIG. 3A, after performing the rest steps(e.g., the fourth and the fifth steps) among the first cycles C1, theportions of the passivation coating 120 formed on top surfaces of thesemiconductor substrate 100 and the mask layer 110 a may be removed anda passivation coating 120 a is formed the on sidewalls the mask layer110 a. As shown in FIG. 4B, after performing the rest steps (e.g., thefourth and the fifth steps) among the first cycles C1, the semiconductorsubstrate 100 may be slightly etched and a recess S1 is formed in thesubstrate 100.

In some embodiments, during the boosting B2 of each etching step in thefirst cycles C1, oxygen gas (O₂) may be further introduced into thereactive chamber and the flowrate of the oxygen gas may range from about45 sccm to about 55 sccm (e.g., about 50 sccm). Furthermore, during themain etching M of each etching step in the first cycles C1, oxygen gasmay be further introduced into the reactive chamber and the flowrate ofthe oxygen gas may range from about 0.5 sccm to about 1.5 sccm (e.g.,about 1 sccm).

When performing the passivating steps of the first cycles C1, the coilradio frequency (RF) power applied to the coil (i.e. upper electrode) ofthe reactive chamber ranges from about 1800 Watts to about 2200 Watts(e.g., about 2000 Watts). When performing the etching steps of the firstcycles C1, the coil RF power applied to the coil of the reactive chamberranges from about 2300 Watts to about 2700 Watts (e.g., about 2500Watts), the platen RF power applied to the platen (i.e. lower electrode)of the reactive chamber ranges from about 100 Watts to about 150 Watts(e.g., about 125 Watts) during the boosting B2, and the platen RF powerapplied to the platen (i.e. lower electrode) of the reactive chamberranges from about 15 Watts to about 25 Watts (e.g., about 20 Watts)during the main etching M. Furthermore, the platen may operate at highfrequency ranging from 10 MHz to 15 MHz, such as 13.56 MHz.

After the first cycles C1 are performed, the passivation coating 120 ashown in FIG. 4B is selectively formed on sidewalls of the mask layer110 a. In some embodiments, the material of the passivation coating 120or 120 a includes C₄F₈.

Referring to FIG. 2, FIG. 3B and FIG. 4C through 4E, a first stageetching process including the second cycles C2 is performed toanisotropically etch the semiconductor substrate 100 revealed by themask layer 110 a. Since the semiconductor substrate 100 is etched by thesecond cycles C2, the second cycles C2 are considered as first etchingcycles. During the second cycles C2, the duration E2 of the etchingstep, the duration D2 of the passivating step and a second durationratio E2/D2 of the etching step to the passivating step are constant. Insome embodiments, the first duration ratio E1/D1 is less than the secondduration ratio E2/D2. For example, the second duration ratio E2/D2 mayrange from about 1.4 to about 1.6.

As shown in FIG. 3B, during the passivating step of each second cycleC2, passivating gas (e.g. C₄F₈ or other suitable passivating gas) isintroduced into the reactive chamber and the flowrate of the passivatinggas may range from about 200 sccm to about 300 sccm (e.g., about 250sccm). During the etching step of each second cycle C2, etching gas(e.g. SF₆ or other suitable etching gas) is introduced into the reactivechamber and the flowrate of the etching gas may range from about 350sccm to about 450 sccm (e.g., about 400 sccm). In other words, thepassivating gas and the etching gas are alternately introduced into thereactive chamber when performing the second cycles C2. In someembodiments, the passivating step of each second cycle C2 include aboosting B1 followed by a passivating P, wherein the duration of theboosting B1 ranges from 0.3 second to about 0.7 second (e.g., about 0.5second), the process pressure applied to the reactive chamber during theboosting B1 ranges from about 35 Torr to about 45 Torr (e.g., about 40Torr), the duration of the passivating P ranges from 1.5 second to 2.5second (e.g., about 2 seconds), and the process pressure applied to thereactive chamber during the passivating P ranges from about 75 Torr toabout 85 Torr (e.g., about 80 Torr).

In some embodiments, the etching step of each second cycle C2 mayinclude a boosting B2 followed by a main etching M. The duration of theboosting B2 may be constant which ranges from about 2 seconds to about 3seconds (e.g., about 2.5 seconds), the process pressure applied to thereactive chamber during the boosting B2 may range from about 20 Torr toabout 30 Torr (e.g., about 25 Torr), the duration of the main etching Mmay be constant which ranges from about 0.3 second to about 0.7 second(e.g., about 0.5 second), and the process pressure applied to thereactive chamber during the main etching M may range from about 75 Torrto about 85 Torr (e.g., 80 Torr).

As shown in FIG. 4C and FIG. 4D, after performing the passivating stepof each second cycle C2, a passivation coating 120 b is conformallyformed on the recess S1 of the semiconductor substrate 100 and the masklayer 110 a. The boosting B2 may be used to remove portions of thepassivation coating 120 b that are formed on a bottom surface of therecess S1 of the semiconductor substrate 100 and the top surface of themask layer 110 a. Portions of the passivation coating 120 that areformed on the sidewalls of the recess S1 and the sidewalls of the masklayer 110 a are not removed by the boosting B2. For example, during theboosting B2 of the second cycles C2, ion bombardment provided by theplasma generated in the reactive chamber is used to remove the portionsof the passivation coating 120 b such that a passivation coating 120 cmay be formed on the sidewalls the mask layer 110 a and the sidewalls ofthe cavity 102. The main etching M of the second cycle C2 may be used toetch the semiconductor substrate 100 such that the recess S1 isdeepened, as shown in FIG. 4D.

In some embodiments, during the boosting B2 of each etching step in thesecond cycles C2, oxygen gas (O₂) may be further introduced into thereactive chamber and the flowrate of the oxygen gas ranges from about 45sccm to about 55 sccm (e.g., about 50 sccm). Furthermore, during themain etching M of each etching step in the second cycles C2, oxygen gasmay be further introduced into the reactive chamber and the flowrate ofthe oxygen gas may range from about 0.5 sccm to about 1.5 sccm (e.g.,about 1 sccm).

When performing the passivating steps of the second cycles C2, the coilRF power applied to the coil (i.e. upper electrode) of the reactivechamber ranges from about 1800 Watts to about 2200 Watts (e.g., about2000 Watts). When performing the etching steps of the second cycles C2,the coil RF power applied to the coil of the reactive chamber rangesfrom about 2300 Watts to about 2700 Watts (e.g., about 2500 Watts), theplaten RF power applied to the platen (i.e. lower electrode) of thereactive chamber ranges from about 100 Watts to about 150 Watts (e.g.,about 125 Watts) during the boosting B2, and the platen RF power appliedto the platen (i.e. lower electrode) of the reactive chamber ranges fromabout 15 Watts to about 25 Watts (e.g., about 20 Watts) during the mainetching M. Furthermore, the platen operates at high frequency rangingfrom 10 MHz to 15 MHz (e.g., about 13.56 MHz).

After the second cycles C2 are performed, the passivation coating 120 dshown in FIG. 4E is selectively formed on the sidewalls of the masklayer 110 a and the sidewalls of the cavity 102. In some embodiments,the material of the passivation coating 120 a, 120 b, 120 c and 120 dincludes C₄F₈.

Referring to FIG. 2, FIG. 3C, FIG. 4D and FIG. 4E, after the first stageetching process including the second cycles C2 is performed, a secondstage etching process including the third cycles C3 may be performedoptionally to anisotropically etch the semiconductor substrate 100 andincrease the roughness of the bottom surface of the cavity 102. Sincethe semiconductor substrate 100 is further etched by the third cyclesC3, the third cycles C3 are second etching cycles. During the thirdcycles C3, the duration E3 of the etching step is variable and ramps upstep by step, the duration D3 of the passivating step is constant, and athird duration ratio E3/D3 of the etching step to the passivating stepis variable and ramps up step by step. In some embodiments, during thethird cycles C3 (i.e. the second etching cycles), the duration E3 of theetching step linearly ramps up step by step, the duration D3 of thepassivating step is constant, and the third duration ratio E3/D3linearly ramps up step by step. The third duration ratio E3/D3 isvariable and may ramp up step by step from X2 to Y2, wherein X2 and Y2are greater than 1 and less than the second duration ratio. For example,the third duration ratio E3/D3 may range from about 1.2 to about 1.35.

As shown in FIG. 3C, during the passivating step of each third cycle C3,passivating gas (e.g. C₄F₈ or other suitable passivating gas) isintroduced into the reactive chamber and the flowrate of the passivatinggas ranges from about 150 sccm to about 250 sccm (e.g., about 200 sccm).During the etching step of each first cycle C1, etching gas (e.g. SF₆ orother suitable etching gas) is introduced into the reactive chamber andthe flowrate of the etching gas may range from about 200 sccm to about300 sccm (e.g., about 250 sccm). In other words, the passivating gas andthe etching gas are alternately introduced into the reactive chamberwhen performing the third cycles C3. In some embodiments, thepassivating step of each third cycle C3 may merely include a passivatingP, wherein the duration of the passivating P may be constant whichranges from about 1.5 second to 2.5 second (e.g., about 2 seconds), theprocess pressure applied to the reactive chamber during the passivatingP may range from about 15 Torr to about 25 Torr (e.g., about 20 Torr).

In some embodiments, during the third cycles C3, each etching step mayrespectively include a boosting B2 followed by a main etching M. Theduration of the boosting B2 may be constant which ranges from about 0.5second to about 1.5 second (e.g., about 1 second), the process pressureapplied to the reactive chamber during the boosting B2 may range fromabout 10 Torr to about 20 Torr (e.g., about 15 Torr), the duration ofthe main etching M may be variable and linearly ramps up step by step,and the process pressure applied to the reactive chamber during the mainetching M may range from about 20 Torr to about 25 Torr (e.g., about 22Torr). For example, the duration of the main etching M linearly ramps upstep by step from about 2.4 seconds to about 2.7 seconds.

When performing the passivating steps of the third cycles C3, the coilRF power applied to the coil (i.e. upper electrode) of the reactivechamber ranges from about 1600 Watts to about 2000 Watts (e.g., about1800 Watts). When performing the etching steps of the third cycles C3,the coil RF power applied to the coil of the reactive chamber rangesfrom about 2300 Watts to about 2700 Watts (e.g., about 2500 Watts), theplaten RF power applied to the platen (i.e. lower electrode) of thereactive chamber ranges from about 80 Watts to about 120 Watts (e.g.,about 100 Watts) during the boosting B2, and the platen RF power appliedto the platen (i.e. lower electrode) of the reactive chamber maylinearly ramp up step by step from about 85 Watts to about 87 Wattsduring the main etching M. Furthermore, the platen operates at lowfrequency ranging from about 350 kHz to about 450 kHz (e.g., about 380kHz). To sum up, above-mentioned the first cycles C1 and the secondcycles C2 are performed under high frequency ranging from about 10 MHzto about 15 MHz (e.g., about 13.56 MHz) and the third cycles C3 areperformed under low frequency which is lower than the high frequencyranging from about 350 kHz to about 450 kHz (e.g., about 380 kHz).

In the semiconductor structure shown in FIG. 1C, a plurality of cavities102 may be formed in the semiconductor substrate 100 and depthuniformity of the cavities 102 may be enhanced by the first cycles C1(i.e. the pre-coating cycles). Furthermore, the roughness of the bottomsurface of the cavities 102 may be increased or optimized by the thirdcycles C3.

FIG. 5A through FIG. 5F schematically illustrate cross-sectional viewsof a method of fabricating a cavity substrate according to someembodiments of the present disclosure.

Referring to FIG. 5A, a semiconductor substrate 100 is provided and amask material layer 110 on the semiconductor substrate 100. For example,the semiconductor substrate 100 may include a silicon substrate orsubstrates made of other semiconductor materials. After forming the maskmaterial layer 110 on the semiconductor substrate 100, aphotolithography process, for example, is performed such that apatterned photoresist layer PR1 is formed on the mask material layer110. The patterned photoresist layer PR1 may include at least one or aplurality of openings for exposing or revealing the mask material layer110 partially. In some embodiments, the mask material layer 110 mayinclude silicon dioxide or other materials having high etchingselectivity with respect to the material of the semiconductor substrate100 (e.g. silicon).

Referring to FIG. 5A and FIG. 5B, by utilizing the patterned photoresistlayer PR1 as a mask, the mask material layer 110 revealed or not coveredby the patterned photoresist layer PR1 may be removed until thesemiconductor substrate 100 is exposed such that a first pattern P1 of amask layer 110 a is formed on the semiconductor substrate 100. In someembodiments, the mask material layer 110 may be patterned through anetching process. After forming the first pattern P1 of the mask layer110 a, the patterned photoresist layer PR1 is stripped. Since the firstpattern P1 has high etching selectivity with respect to thesemiconductor substrate 100, the first pattern P1 is a patterned hardmask layer.

Referring to FIG. 5C, a second pattern P2 of the mask layer 110 a isformed on the semiconductor substrate 100 revealed by the first patternP1. The second pattern P2 and the first pattern P1 are not overlappedwith each other. For example, the second pattern P2 may be formed on thetop surface of the semiconductor substrate 100 and located in theopenings defined in the first pattern P1. In some embodiments, the firstpattern P1 and the second pattern P2 are made of different materials andthe second pattern P2 of the mask layer 110 a may be a patternedphotoresist layer.

Referring to FIG. 5D, an anisotropic etching process is performed toform a first cavity 102 in the semiconductor substrate 100 and a firstbump BP1 surrounded by the first cavity 102. By utilizing the mask layer110 a including the first pattern P1 and the second pattern P2 as anetching mask, the semiconductor substrate 100 revealed by the mask layer110 a is anisotropically etched until the first cavity 102 having apredetermined depth D1 and the first bump BP1 covered by the secondpattern P2 of the mask layer 110 a are formed. In some embodiments, theheight of the first bump BP1 and the depth D1 of the first cavity 102may range from about 9 micrometers to about 12 micrometers. However, theheight of the first bump BP1 and the depth D1 of the first cavity 102are not limited.

The afore-said anisotropic etching process for forming the first cavity102 in the semiconductor substrate 100 includes a plurality of cycles.Recipe of the cycles for forming the first cavity 102 in thesemiconductor substrate 100 is, for example, the same with that of theabove-mentioned second cycles C2 (shown in FIG. 3B) of the first stageetching process. Accordingly, details of the recipe of the cycles forforming the first cavity 102 in the semiconductor substrate 100 areomitted.

Referring to FIG. 5E, Referring to FIG. 5D, the second pattern P2 of themask layer 110 a is removed from the first bump BP1 to further revealthe top surface of the first bump BP1. In some embodiments, the secondpattern P2 (e.g., the patterned photoresist layer) of the mask layer 110a may be removed or stripped by aching or other suitable processes.

Referring to FIG. 5E and FIG. 5F, a multi-step anisotropic etchingprocess is performed one the semiconductor substrate 100 such that thesemiconductor substrate 100 revealed by the first pattern P1 of the masklayer 110 a is anisotropically etched until the first cavity 102 (shownin FIG. 5E) is deepened to form a second cavity 104 and a second bumpBP2 is formed in the second cavity 104. By utilizing the first patternP1 of the mask layer 110 a as an etching mask, the semiconductorsubstrate 100 having the first cavity 102 and the first bump BP1 isanisotropically etched until the second cavity 104 having apredetermined depth (D1+D2) and the second bump BP2 are formed. In someembodiments, the depth (D1+D2) of the second cavity 104 may range fromabout 15 micrometers to about 25 micrometers. However, the depth (D1+D2)of the second cavity 104 is not limited. In some embodiments, the heightof the second bump BP2 and the height of the first bump BP1 (i.e. D1)may range from about 9 micrometers to about 12 micrometers.

The multi-step etching process for forming the second cavity 104 and thesecond bump BP2 is described in accompany with FIG. 2, FIG. 5E, FIG. 5Fand FIG. 6A through FIG. 6E in detail.

FIG. 6A through FIG. 6E schematically illustrate cross-sectional view ofa method of fabricating the second cavity shown in Y portion of FIG. 5Eaccording to some embodiments of the present disclosure.

Referring to FIG. 2, FIG. 5E, FIG. 5F and FIG. 6A through FIG. 6E, themulti-step anisotropic etching process for forming the second cavity 104and the second bump BP2 may include performing a plurality of firstcycles C1 and performing a plurality of second cycles C2, and the secondcycles C2 are performed repeatedly after the first cycles C1. Theabove-mentioned first and second cycles C1 and C2 are performed in areactive chamber suitable for generating plasma for anisotropic etching.Each one cycle among the first cycles C1 and the second cycles C2 mayrespectively include a passivating step and an etching step performedafter the passivating step. After performing the first cycles C1 and thesecond cycles C2, a passivation coating may remain on sidewalls of thesecond cavity 104 and sidewalls of the etched bump BP (shown in FIG. 6Cthrough FIG. 6E), and thus a removal process R may be performed toremove the passivation coating formed on the sidewalls of the secondcavity 104 and the sidewalls of the etched bump BP. For example, thefirst cycles C1 may be performed repeatedly n1 times and the secondcycles C2 may be performed repeatedly n2 times. For example, n1 may bean integer ranging from 2 to 4; and n2 may be an integer ranging from 2to 4. The value of n1 and n2 depends on the depth (D1+D2) of the secondcavity 104.

In some alternative embodiments, the multi-step anisotropic etchingprocess for forming the second cavity 104 and the second bump BP2 mayfurther include a plurality of third cycles C3 performed repeatedlyafter the second cycles C2. The above-mentioned first, second and thirdcycles C1, C2 and C3 are performed in a reactive chamber suitable forgenerating plasma for anisotropic etching. Each one cycle among thefirst cycles C1, the second cycles C2 and the third cycles C3 mayrespectively include a passivating step and an etching step performedafter the passivating step. After performing the first cycles C1, thesecond cycles C2 and the third cycles C3, a passivation coating mayremain on sidewalls of the second cavity 104 and sidewall of the etchedbump BP, and thus a removal process R may be performed to remove thepassivation coating formed on the sidewalls of the second cavity 104 andthe sidewall of the etched bump BP. For example, the first cycles C1 maybe performed repeatedly n1 times, the second cycles C2 may be performedrepeatedly n2 times, and the third cycles C3 may be performed n3 times.For example, n1 may be an integer ranging from 2 to 4; n2 may be aninteger ranging from 2 to 4; and n3 may be an integer ranging from 2 to4. The value of n1, n2 and n3 depends on the depth (D1+D2) of the secondcavity 104.

Referring to FIG. 2, FIG. 3A and FIG. 6A, a pre-coating process isperformed on the semiconductor substrate 100 and the first pattern P1 ofthe mask layer 110 a by the first cycles C1 such that a passivationcoating 120 is conformally formed on the first pattern P1, the firstbump BP1 and the semiconductor substrate 100. Since the passivationcoating 120 is formed by the first cycles C1, the first cycles C1 arepre-coating cycles. During the first cycles C1, the duration E1 of theetching step is variable and ramps up step by step, the duration D1 ofthe passivating step is variable and ramps down step by step, and afirst duration ratio E1/D1 of the etching step to the passivating stepis variable and ramps up step by step. In some embodiments, during thefirst cycles C1 (i.e. the pre-coating cycles), the duration E1 of theetching step linearly ramps up step by step, the duration D1 of thepassivating step linearly ramps down step by step, and the firstduration ratio E1/D1 non-linearly ramps up step by step. The firstduration ratio E1/D1 is variable and may ramp up step by step from X1 toYl, wherein X1 is less than 1 (e.g. about 0.4), and Y1 is greater than 1and less than 1.5.

As shown in FIG. 3A, during the passivating step of each first cycle C1,passivating gas (e.g. C₄F₈) is introduced into the reactive chamber andthe flowrate of the passivating gas may range from about 200 sccm toabout 300 sccm (e.g., about 250 sccm). During the etching step of eachfirst cycle C1, etching gas (e.g. SF₆) is introduced into the reactivechamber and the flowrate of the etching gas may range from about 350sccm to about 450 sccm (e.g., about 400 sccm). In other words, thepassivating gas and the etching gas are alternately introduced into thereactive chamber when performing the first cycles C1. In someembodiments, the passivating step of each first cycle C1 may include aboosting B1 followed by a passivating P, wherein the duration of theboosting B1 may range from about 0.3 second to about 0.7 second (e.g.,about 0.5 second), the process pressure applied to the reactive chamberduring the boosting B1 may range from about 35 Torr to about 45 Torr(e.g., about 40 Torr), the duration of the passivating P linearly rampsdown step by step from about 5 seconds to about 2 seconds, and theprocess pressure applied to the reactive chamber during the passivatingP may range from about 75 Torr to about 85 Torr (e.g., about 80 Torr).

In some embodiments, during the foremost cycles (e.g., the first threecycles) among the first cycles C1, each etching step may respectivelyinclude a boosting B2 only, and the duration of the boosting B2 may bevariable and may ramp up from about 2 seconds to about 2.5 seconds stepby step. The boosting B2 may be used to at least partially removeportions of the passivation coating 120 that are formed on top surfacesof the semiconductor substrate 100 and the first pattern P1, andportions of the passivation coating 120 formed on sidewalls the firstpattern P1 are not removed by the boosting B2. For example, during theboosting B2 of the first cycles C1, ion bombardment provided by theplasma generated in the reactive chamber is used to remove the portionsof the passivation coating 120 formed on top surfaces of thesemiconductor substrate 100 and the first pattern P1. The portions ofthe passivation coating 120 formed on sidewalls the first pattern P1 arenot removed by ion bombardment provided by the plasma. After performingthe foremost steps (e.g., the first three steps) among the first cyclesC1, the semiconductor substrate 100 and the first bump BP1 may not beetched due to the protection of the pre-coating (i.e. the passivationcoating 120).

Referring to FIG. 3A, FIG. 6B and FIG. 6C, during the rest steps (e.g.,the fourth and the fifth steps) among the first cycles C1, each etchingstep may respectively include a boosting B2 followed by a main etchingM. The duration of the boosting B2 may be constant which ranges fromabout 2 seconds to about 3 seconds (e.g., about 2.5 seconds), theprocess pressure applied to the reactive chamber during the boosting B2may range about 20 Torr to about 30 Torr (e.g., about 25 Torr), theduration of the main etching M may be variable and linearly ramps upstep by step, and the process pressure applied to the reactive chamberduring the main etching M may range from about 75 Torr to about 85 Torr(e.g., about 80 Torr). As shown in FIG. 3A, after performing the reststeps (e.g., the fourth and the fifth steps) among the first cycles C1,the portions of the passivation coating 120 formed on top surfaces ofthe semiconductor substrate 100 and the first pattern P1 may be removedand a passivation coating 120 a is formed the on sidewalls the firstpattern P1 and the sidewalls of the first bump BP1. As shown in FIG. 6C,after performing the rest steps (e.g., the fourth and the fifth steps)among the first cycles C1, the semiconductor substrate 100 and the firstbump BP1 may be slightly etched to as to form an etched bump BP, whereinthe top surface of the etched bump BP is lower than the bottom surfaceof the first pattern P1.

In some embodiments, during the boosting B2 of each etching step in thefirst cycles C1, oxygen gas (O₂) may be further introduced into thereactive chamber and the flowrate of the oxygen gas may range from about45 sccm to about 55 sccm (e.g., about 50 sccm). Furthermore, during themain etching M of each etching step in the first cycles C1, oxygen gasmay be further introduced into the reactive chamber and the flowrate ofthe oxygen gas may range from about 0.5 sccm to about 1.5 sccm (e.g.,about 1 sccm).

When performing the passivating steps of the first cycles C1, the coilradio frequency (RF) power applied to the coil (i.e. upper electrode) ofthe reactive chamber ranges from about 1800 Watts to about 2200 Watts(e.g., about 2000 Watts). When performing the etching steps of the firstcycles C1, the coil RF power applied to the coil of the reactive chamberranges from about 2300 Watts to about 2700 Watts (e.g., about 2500Watts), the platen RF power applied to the platen (i.e. lower electrode)of the reactive chamber ranges from about 100 Watts to about 150 Watts(e.g., about 125 Watts) during the boosting B2, and the platen RF powerapplied to the platen (i.e. lower electrode) of the reactive chamberranges from about 15 Watts to about 25 Watts (e.g., about 20 Watts)during the main etching M. Furthermore, the platen operates at highfrequency ranging from 10 MHz to 15 MHz (e.g., about 13.56 MHz).

After the first cycles C1 are performed, the passivation coating 120 ashown in FIG. 6B is selectively formed on sidewalls of the first patternP1. In some embodiments, the material of the passivation coating 120 or120 a may include C₄F₈.

Referring to FIG. 2, FIG. 3B and FIG. 6D through 6E, a first stageetching process including the second cycles C2 is performed toanisotropically etch the semiconductor substrate 100 and the etched bumpBP revealed by the first pattern P1. Since the semiconductor substrate100 and the etched bump BP is etched by the second cycles C2, the secondcycles C2 are first etching cycles. During the second cycles C2, theduration E2 of the etching step, the duration D2 of the passivating stepand a second duration ratio E2/D2 of the etching step to the passivatingstep are constant. In some embodiments, the first duration ratio E1/D1is less than the second duration ratio E2/D2. For example, the secondduration ratio E2/D2 may range from about 1.4 to about 1.6.

As shown in FIG. 3B, during the passivating step of each second cycleC2, passivating gas (e.g. C₄F₈) is introduced into the reactive chamberand the flowrate of the passivating gas may range from about 200 sccm toabout 300 sccm (e.g., about 250 sccm). During the etching step of eachsecond cycle C2, etching gas (e.g. SF₆) is introduced into the reactivechamber and the flowrate of the etching gas may range from about 350sccm to about 450 sccm (e.g., about 400 sccm). In other words, thepassivating gas and the etching gas are alternately introduced into thereactive chamber when performing the second cycles C2. In someembodiments, the passivating step of each second cycle C2 may include aboosting B1 followed by a passivating P, wherein the duration of theboosting B1 may range from 0.3 second to about 0.7 second (e.g., about0.5 second), the process pressure applied to the reactive chamber duringthe boosting B1 may range from about 35 Torr to about 45 Torr (e.g.,about 40 Torr), the duration of the passivating P ranges from 1.5 secondto 2.5 second (e.g., about 2 seconds), and the process pressure appliedto the reactive chamber during the passivating P may range from about 75Torr to about 85 Torr (e.g., about 80 Torr).

In some embodiments, the etching step of each second cycle C2 mayinclude a boosting B2 followed by a main etching M. The duration of theboosting B2 may be constant which ranges from about 2 seconds to about 3seconds (e.g., about 2.5 seconds), the process pressure applied to thereactive chamber during the boosting B2 may range from about 20 Torr toabout 30 Torr (e.g., about 25 Torr), the duration of the main etching Mmay be constant which ranges from about 0.3 second to about 0.7 second(e.g., about 0.5 second), and the process pressure applied to thereactive chamber during the main etching M may range from about 75 Torrto about 85 Torr (e.g., about 80 Torr).

The boosting B2 may be used to remove portions of the passivationcoating 120 b that are formed on a bottom surface of the first cavity102 of the semiconductor substrate 100 and the top surface of the firstpattern P1. Portions of the passivation coating 120 that are formed onthe sidewalls of the first cavity 102, the sidewalls of the etched bumpBP and the sidewalls of the first pattern P1 are not removed by theboosting B2. For example, during the boosting B2 of the second cyclesC2, ion bombardment provided by the plasma generated in the reactivechamber is used to remove the portions of the passivation coating 120 bsuch that the passivation coating 120 b is formed on the sidewalls thefirst pattern P1, the sidewall of the etch bump BP and the sidewalls ofthe etched bump BP. The main etching M of the second cycle C2 may beused to etch the semiconductor substrate 100 such that the first cavity102 is deepened, as shown in FIG. 6D.

In some embodiments, during the boosting B2 of each etching step in thesecond cycles C2, oxygen gas (O₂) may be further introduced into thereactive chamber and the flowrate of the oxygen gas may range from about45 sccm to about 55 sccm (e.g., about 50 sccm). Furthermore, during themain etching M of each etching step in the second cycles C2, oxygen gasmay be further introduced into the reactive chamber and the flowrate ofthe oxygen gas may range from about 0.5 sccm to about 1.5 sccm (e.g.,about 1 sccm).

When performing the passivating steps of the second cycles C2, the coilRF power applied to the coil (i.e. upper electrode) of the reactivechamber ranges from about 1800 Watts to about 2200 Watts (e.g., about2000 Watts). When performing the etching steps of the second cycles C2,the coil RF power applied to the coil of the reactive chamber rangesfrom about 2300 Watts to about 2700 Watts (e.g., about 2500 Watts), theplaten RF power applied to the platen (i.e. lower electrode) of thereactive chamber ranges from about 100 Watts to about 150 Watts (e.g.,about 125 Watts) during the boosting B2, and the platen RF power appliedto the platen (i.e. lower electrode) of the reactive chamber ranges fromabout 15 Watts to about 25 Watts (e.g., about 20 Watts) during the mainetching M. Furthermore, the platen operates at high frequency rangingfrom 10 MHz to 15 MHz (e.g., about 13.56 MHz).

After the second cycles C2 are performed, the passivation coating 120 bshown in FIG. 6E is selectively formed on the sidewalls of the firstpattern, the sidewalls of the etched bump BP and the sidewalls of thefirst cavity 102. In some embodiments, the material of the passivationcoating 120 a and 120 b may include C₄F₈.

Referring to FIG. 2, FIG. 3C, FIG. 5F, FIG. 6D and FIG. 6E, after thefirst stage etching process including the second cycles C2 is performed,a second stage etching process including the third cycles C3 may beperformed optionally to anisotropically etch the semiconductor substrate100 and the etched bump BP and increase the roughness of the bottomsurface of the second cavity 104 (shown in FIG. 5F). Since thesemiconductor substrate 100 and the etched bump BP is further etched bythe third cycles C3, the third cycles C3 are second etching cycles.During the third cycles C3, the duration E3 of the etching step isvariable and ramps up step by step, the duration D3 of the passivatingstep is constant, and a third duration ratio E3/D3 of the etching stepto the passivating step is variable and ramps up step by step. In someembodiments, during the third cycles C3 (i.e. the second etchingcycles), the duration E3 of the etching step linearly ramps up step bystep, and the third duration ratio E3/D3 linearly ramps up step by step.The third duration ratio E3/D3 is variable and may ramp up step by stepfrom X2 to Y2, wherein X2 and Y2 are greater than 1 and less than thesecond duration ratio. For example, the third duration ratio E3/D3 mayrange from about 1.2 to about 1.35.

As shown in FIG. 3C, during the passivating step of each third cycle C3,passivating gas (e.g. C₄F₈) is introduced into the reactive chamber andthe flowrate of the passivating gas ranges from about 150 sccm to about250 sccm (e.g., about 200 sccm). During the etching step of each firstcycle C1, etching gas (e.g. SF₆) is introduced into the reactive chamberand the flowrate of the passivating gas may range from about 200 sccm toabout 300 sccm (e.g., about 250 sccm). In other words, the passivatinggas and the etching gas are alternately introduced into the reactivechamber when performing the third cycles C3. In some embodiments, thepassivating step of each third cycle C3 may merely include a passivatingP, wherein the duration of the passivating P may be constant whichranges from about 1.5 second to 2.5 second (e.g., about 2 seconds), theprocess pressure applied to the reactive chamber during the passivatingP may range from about 15 Torr to about 25 Torr (e.g., about 20 Torr).

In some embodiments, during the third cycles C3, each etching step mayrespectively include a boosting B2 followed by a main etching M. Theduration of the boosting B2 may be constant which ranges from about 0.5second to about 1.5 second (e.g., about 1 second), the process pressureapplied to the reactive chamber during the boosting B2 may range fromabout 10 Torr to about 20 Torr (e.g., about 15 Torr), the duration ofthe main etching M may be variable and linearly ramps up step by step,and the process pressure applied to the reactive chamber during the mainetching M may range from about 20 Torr to about 25 Torr (e.g., about 22Torr). For example, the duration of the main etching M may linearly rampup step by step from about 2.4 seconds to about 2.7 seconds.

When performing the passivating steps of the third cycles C3, the coilRF power applied to the coil (i.e. upper electrode) of the reactivechamber ranges from about 1600 Watts to about 2000 Watts (e.g., about1800 Watts). When performing the etching steps of the third cycles C3,the coil RF power applied to the coil of the reactive chamber rangesfrom about 2300 Watts to about 2700 Watts (e.g., about 2500 Watts), theplaten RF power applied to the platen (i.e. lower electrode) of thereactive chamber ranges from about 80 Watts to about 120 Watts (e.g.,about 100 Watts) during the boosting B2, and the platen RF power appliedto the platen (i.e. lower electrode) of the reactive chamber maylinearly ramp up step by step from about 85 Watts to about 87 Wattsduring the main etching M. Furthermore, the platen operates at lowfrequency ranging from about 350 kHz to about 450 kHz (e.g., about 380kHz). To sum up, above-mentioned the first cycles C1 and the secondcycles C2 are performed under high frequency ranging from about 10 MHzto about 15 MHz (e.g., about 13.56 MHz) and the third cycles C3 areperformed under low frequency which is lower than the high frequencyranging from about 350 kHz to about 450 kHz (e.g., about 380 kHz).

In the cavity substrate shown in FIG. 5F, the cavity a plurality ofsecond cavities 104 may be formed in the semiconductor substrate 100 anddepth uniformity of the second cavities 104 and the profile of thesecond bumps BP2 may be enhanced by the first cycles C1 (i.e. thepre-coating cycles) and the second cycles C2. Furthermore, the roughnessof the bottom surface of the second cavities 104 may be increased oroptimized by the third cycles C3.

FIG. 7A through FIG. 7C schematically illustrate cross-sectional viewsof a method of fabricating a microelectromechanical system (MEMS) deviceincluding a cavity substrate, a MEMS substrate and a control circuit.

Referring to FIG. 7A, a cavity substrate 200 and a MEMS substrate 300including at least one or a plurality of moving parts 310 and 320 areprovided. The cavity substrate 200 is formed by the process illustratedin FIG. 5A through FIG. 5F. The cavity substrate 200 includes asubstrate 100 having cavities 104 and bumps BP2, the moving parts 310and 320 are movable with respect to the MEMS substrate 300. In someembodiments, the moving parts 310 and 320 may be a part of anaccelerometer or a gyrometer, for example.

Referring to FIG. 7B, the MEMS substrate 300 is bonded to the cavitysubstrate 200. In some embodiments, the cavity substrate 200 and theMEMS substrate 300 are, for example, formed in wafer form, and thecavity substrate 200 and the MEMS substrate 300 may be bonded to eachother through wafer level bonding process. After the cavity substrate200 and the MEMS substrate 300 are bonded, a control circuit 400 isprovided. For example, the control circuit 400 is formed in wafer form.

Referring to FIG. 7C, the control circuit 400 is bonded to the MEMSsubstrate 300 so as to electrically connected to the MEMS substrate 300.After the control circuit 400 is bonded and electrically connected tothe MEMS substrate 300, the MEMS device is accomplished essentially. Asshown in FIG. 7C, the MEMS substrate 300 is sandwiched between thecavity substrate 200 and the control circuit 400. In some embodiments,the cavity substrate 200, the MEMS substrate 300 and the control circuit400 are, for example, all formed in wafer form and the cavity substrate200, the MEMS substrate 300 and the control circuit 400 may be bonded toone another through wafer level bonding process.

In the MEMS device, when the moving parts 310 and 320 move into thecavities 104 of the cavity substrate 200, the movement of the movingparts 310 and 320 may be constrained or stop by the bumps BP2 of thecavity substrate 200. Accordingly, the moving parts 310 and 320 functionas stoppers for the moving parts 310 and 320. In the MEMS device, thedepth uniformity of the cavities 104 and the profile of the bumps BP2may be enhanced by the first cycles C1 (i.e. the pre-coating cycles) andthe second cycles C2. Furthermore, since the roughness of the bottom ofthe cavities 102 may be increased by the third cycles (C3), van derWaals' force generated between the bumps BP2 and the moving parts 310and 320 may be minimized. Accordingly, stiction of the moving parts 310and 320 may be improved or prevented.

In accordance with some embodiments of the disclosure, a method offabricating a semiconductor structure including the following steps isprovided. A mask layer is formed on a semiconductor substrate. Thesemiconductor substrate revealed by the mask layer is anisotropicallyetched until a cavity is formed in the semiconductor substrate, whereinanisotropically etching the semiconductor substrate revealed by the masklayer includes performing a plurality of first cycles and performing aplurality of second cycles after performing the first cycles, each cycleamong the first and second cycles respectively includes performing apassivating step and performing an etching step after performing thepassivating step. During the first cycles, a first duration ratio of theetching step to the passivating step is variable and ramps up step bystep. During the second cycles, a second duration ratio of the etchingstep to the passivating step is constant, and the first duration ratiois less than the second duration ratio.

In accordance with some embodiments of the disclosure, a method offabricating a semiconductor structure including the following steps isprovided. A mask layer is formed on a semiconductor substrate, whereinthe mask layer includes a first pattern and a second pattern. Thesemiconductor substrate revealed by the mask layer is anisotropicallyetched until a first cavity and a first bump covered by the secondpattern are formed. The second pattern of the mask layer is removed fromthe first bump. The semiconductor substrate revealed by the firstpattern of the mask layer is anisotropically etched until the firstcavity is deepened to form a second cavity and a second bump is formedin the second cavity, wherein anisotropically etching the semiconductorsubstrate revealed by the first pattern of the mask layer includesperforming a plurality of first cycles and performing a plurality ofsecond cycles after performing the first cycles, each cycle among thefirst and second cycles respectively includes performing a passivatingstep and performing an etching step after performing the passivatingstep. During the first cycles, a first duration ratio of the etchingstep to the passivating step is variable and ramps up step by step.During the second cycles, a second duration ratio of the etching step tothe passivating step is constant, and the first duration ratio is lessthan the second duration ratio.

In accordance with some embodiments of the disclosure, a method offabricating a semiconductor structure including the following steps isprovided. A mask layer is formed on a semiconductor substrate, whereinthe mask layer includes a first pattern and a second pattern. Thesemiconductor substrate revealed by the mask layer is anisotropicallyetched until a first cavity and a first bump covered by the secondpattern are formed. The second pattern of the mask layer is removed fromthe first bump. The semiconductor substrate revealed by the firstpattern of the mask layer is anisotropically etched until the firstcavity is deepened to form a second cavity and a second bump is formedin the second cavity, wherein anisotropically etching the semiconductorsubstrate revealed by the first pattern of the mask layer includes aplurality of pre-coating cycles, a plurality of first etching cyclesperformed after the pre-coating cycles and a plurality of second etchingcycles performed after the first etching cycles, each cycle among thepre-coating cycles, the first etching cycles and the second etchingcycles respectively includes a passivating step and an etching stepperformed after the passivating step. During the pre-coating cycles,duration of the etching step is variable and ramps up step by step,duration of the passivating step is variable and ramps down step bystep, and a first duration ratio of the etching step to the passivatingstep is variable and ramps up step by step. During the first etchingcycles, duration of the etching step and duration of the passivatingstep and a second duration ratio of the etching step to the passivatingstep are constant. During the second etching cycles, duration of theetching step is variable and ramps up step by step, duration of thepassivating step is constant, and a third duration ratio of the etchingstep to the passivating step is variable and ramps up step by step. Thesecond duration ratio is greater than the first duration ratio and thethird duration ratio.

In accordance with some embodiments of the disclosure, a method offabricating a semiconductor structure including the following steps isprovided. A mask layer is formed on a semiconductor substrate, whereinthe mask layer includes a first pattern and a second pattern. Thesemiconductor substrate revealed by the mask layer is anisotropicallyetched until a first cavity and a first bump covered by the secondpattern are formed. The second pattern of the mask layer is removed fromthe first bump. The semiconductor substrate revealed by the firstpattern of the mask layer is anisotropically etched until the firstcavity is deepened to form a second cavity and a second bump is formedin the second cavity, wherein anisotropically etching the semiconductorsubstrate revealed by the first pattern of the mask layer includes aplurality of pre-coating cycles, a plurality of first etching cyclesperformed after the pre-coating cycles and a plurality of second etchingcycles performed after the first etching cycles, each cycle among thepre-coating cycles, the first etching cycles and the second etchingcycles respectively includes a passivating step and an etching stepperformed after the passivating step. During the pre-coating cycles, afirst duration ratio of the etching step to the passivating step isvariable and ramps up step by step. During foremost cycles among thepre-coating cycles, each etching step respectively includes a boostingfor partially removing a passivation coating formed by the passivatingstep; and during the rest cycles among the pre-coating cycles, eachetching step respectively includes a boosting followed by a mainetching. During the first etching cycles, a second duration ratio of theetching step to the passivating step are constant. During the secondetching cycles, a third duration ratio of the etching step to thepassivating step is variable and ramps up step by step. The secondduration ratio is greater than the first duration ratio and the thirdduration ratio.

In accordance with some embodiments of the disclosure, a method offabricating a semiconductor structure including forming a cavitysubstrate; providing a microelectromechanical system (MEMS) substrateincluding a moving part; bonding the MEMS substrate to the cavitysubstrate; and electrically connecting the MEMS substrate bonded to thecavity substrate with a control circuit is provided. The cavitysubstrate is formed by the following steps. A mask layer including afirst pattern and a second pattern is formed on a semiconductorsubstrate. The semiconductor substrate revealed by the mask layer isanisotropically etched until a first cavity and a first bump covered bythe second pattern are formed. The second pattern of the mask layer isremoved from the first bump. The semiconductor substrate revealed by thefirst pattern of the mask layer is anisotropically etched until thefirst cavity is deepened to form a second cavity and a second bump isformed in the second cavity, wherein anisotropically etching thesemiconductor substrate revealed by the first pattern includesperforming a plurality of first cycles and performing a plurality ofsecond cycles after performing the first cycles, each cycle among thefirst and second cycles respectively includes performing a passivatingstep and performing an etching step after performing the passivatingstep. During the first cycles, a first duration ratio of the etchingstep to the passivating step is variable and ramps up step by step.During the second cycles, a second duration ratio of the etching step tothe passivating step is constant, and the first duration ratio is lessthan the second duration ratio. The movement of the moving part isconstrained by the second bump formed in the second cavity.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A method of fabricating a semiconductorstructure, comprising: forming a mask layer on a semiconductorsubstrate; and anisotropically etching the semiconductor substraterevealed by the mask layer until a cavity is formed in the semiconductorsubstrate, wherein anisotropically etching the semiconductor substraterevealed by the mask layer comprises performing a plurality of firstcycles and performing a plurality of second cycles after performing thefirst cycles, each cycle among the first and second cycles respectivelycomprises performing a passivating step and performing an etching stepafter performing the passivating step, during the first cycles, a firstduration ratio of the etching step to the passivating step is variableand ramps up step by step, during the second cycles, a second durationratio of the etching step to the passivating step is constant, and thefirst duration ratio is less than the second duration ratio.
 2. Themethod according to claim 1, wherein the first duration rationon-linearly ramps up step by step.
 3. The method according to claim 1,wherein the first duration ratio ramps up step by step from X1 to Y1, X1is less than 1, and Y1 is greater than 1 and less than the secondduration ratio 1.2.
 4. The method according to claim 1, whereinanisotropically etching the semiconductor substrate revealed by the masklayer further comprises performing a plurality of third cycles afterperforming the second cycles, each cycle among the third cyclesrespectively comprises performing a passivating step and performing anetching step after performing the passivating step, during the thirdcycles, a third duration ratio of the etching step to the passivatingstep is variable and ramps up step by step.
 5. The method according toclaim 4, wherein the third duration ratio linearly ramps up step bystep.
 6. The method according to claim 4, wherein the third durationratio is variable and ramps up step by step from X2 to Y2, and X2 and Y2are greater than 1 and less than the second duration ratio.
 7. Themethod according to claim 4, wherein the first cycles and the secondcycles are performed when a platen operates at a first frequency and thethird cycles are performed when a platen operates at a second frequencylower than the first frequency.
 8. A method of fabricating asemiconductor structure, comprising: forming a mask layer on asemiconductor substrate, the mask layer comprising a first pattern and asecond pattern; anisotropically etching the semiconductor substraterevealed by the mask layer until a first cavity and a first bump coveredby the second pattern are formed; removing the second pattern of themask layer from the first bump; and anisotropically etching thesemiconductor substrate revealed by the first pattern of the mask layeruntil the first cavity is deepened to form a second cavity and a secondbump is formed in the second cavity, wherein anisotropically etching thesemiconductor substrate revealed by the first pattern of the mask layercomprises performing a plurality of cycles each comprising performing apassivating step and performing an etching step after performing thepassivating step, during a first number of the plurality of cycles, afirst duration ratio of the etching step to the passivating step isvariable and ramps up step by step, during a second number of theplurality of cycles, a second duration ratio of the etching step to thepassivating step is constant, and the first duration ratio is less thanthe second duration ratio.
 9. The method according to claim 8, whereinthe first pattern of the mask layer comprises a patterned hard masklayer, the second pattern of the mask layer comprises a patternedphotoresist layer, and forming the mask layer comprising the firstpattern and the second pattern on the semiconductor substrate comprises:forming a hard mask material layer on the semiconductor substrate;patterning the hard mask material layer to form the patterned hard masklayer on the semiconductor substrate; and forming the patternedphotoresist layer on the semiconductor substrate revealed by thepatterned hard mask layer.
 10. The method according to claim 8, whereinthe first duration ratio non-linearly ramps up step by step.
 11. Themethod according to claim 8, wherein the first duration ratio isvariable and ramps up step by step from X1 to Y1, X1 is less than 1, andY1 is greater than 1 and less than the second duration ratio.
 12. Themethod according to claim 8, wherein anisotropically etching thesemiconductor substrate revealed by the first pattern further comprisesperforming a plurality of a third number of the plurality of cyclesperformed after performing the second number of the plurality of cycles,during the third number of the plurality of cycles, a third durationratio of the etching step to the passivating step is variable and rampsup step by step.
 13. The method according to claim 12, wherein the thirdduration ratio linearly ramps up step by step.
 14. The method accordingto claim 12, wherein the third duration is variable and ratio ramps upstep by step from X2 to Y2, and X2 and Y2 are greater than 1 and lessthan the second duration ratio.
 15. The method according to claim 12,wherein the first number of the plurality of cycles and the secondnumber of the plurality of cycles are performed when a platen operatesat a first frequency and the third number of the plurality of cycles areperformed when a platen operates at a second frequency lower than thefirst frequency.
 16. A method of fabricating a MEMS device, comprising:forming a mask layer on a semiconductor substrate, the mask layercomprising a first pattern and a second pattern; anisotropically etchingthe semiconductor substrate revealed by the mask layer until a firstcavity and a first bump covered by the second pattern are formed;removing the second pattern of the mask layer from the first bump; andanisotropically etching the semiconductor substrate revealed by thefirst pattern of the mask layer until the first cavity is deepened toform a second cavity and a second bump is formed in the second cavity,wherein anisotropically etching the semiconductor substrate revealed bythe first pattern of the mask layer comprises a plurality of pre-coatingcycles, a plurality of first etching cycles performed after thepre-coating cycles and a plurality of second etching cycles performedafter the first etching cycles, each cycle among the pre-coating cycles,the first etching cycles and the second etching cycles respectivelycomprises a passivating step and an etching step performed after thepassivating step, during the pre-coating cycles, duration of the etchingstep is variable and ramps up step by step and duration of thepassivating step is variable and ramps down step by step, during thefirst etching cycles, duration of the etching step and duration of thepassivating step are constant, during the second etching cycles,duration of the etching step is variable and ramps up step by step andduration of the passivating step is constant, wherein a second durationratio of the etching step to the passivating step is greater than afirst duration ratio of the etching step to the passivating step and thethird duration ratio of the etching step to the passivating step. 17.The method according to claim 16, wherein during the pre-coating cycles,duration of the etching step linearly ramps up step by step, duration ofthe passivating step linearly ramps down step by step, and the firstduration ratio non-linearly ramps up step by step, during the secondetching cycles, duration of the etching step linearly ramps up step bystep, duration of the passivating step is constant, and the thirdduration ratio linearly ramps up step by step.
 18. The method accordingto claim 16, wherein the first duration ratio is variable and ramps upstep by step from X1 to Y1, X1 is less than 1, and Y1 is greater than 1and less than the second duration ratio.
 19. The method according toclaim 16, wherein the third duration ratio is variable and ramps up stepby step from X2 to Y2, and X2 and Y2 are greater than 1 and less thanthe second duration ratio.
 20. The method according to claim 16, whereinthe pre-coating cycles and the first etching cycles are performed when aplaten operates at a first frequency and the second etching cycles areperformed when a platen operates at a second frequency lower than thefirst frequency.
 21. The method according to claim 16, wherein thesecond duration ratio is constant, and the first duration ratio and thethird second duration ratio are variable and ramp up step by step. 22.The method according to claim 16, wherein during the pre-coating cycles,duration of the passivating step is variable and ramps down step bystep.